BUL44

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL44 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.6V(Max) @ IC= 1.0A APPLICATIONS ·Designed for use in 220V line operated switchmode power Supplies and electronic light ballasts. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 2A ICM Collector Current-peak 5A IB Base Current-Continuous 1A IBM Base Current-peak PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 2 50 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-A Thermal Resistance,Junction to Case 2.5 ℃/W Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL44 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH VCE(sat)-1 VCE(sat)-2 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC= 0.4A ;IB= 40mA IC= 0.4A ;IB= 40mA,TC= 125℃ IC= 1A ;IB= 0.2A IC= 1A ;IB= 0.2A,TC= 125℃ VBE(sat)-1 Base-Emitter Saturation Voltage IC= 0.4A ;IB= 40mA 400 VBE(sat)-2 B...