MBR2065CT

INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBR2065CT FEATURES ·Dual Rectifier Conduction, Positive Center Tap ·Metal Silicon Junction, Majority Carrier Conduction ·Low Power Loss/High Efficiency ·High Current Capability, Low Forward Voltage Drop ·High Surge Capacity ·Guarding for Overvoltage protection ·For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·High Temperature Soldering Guaranteed: 250℃ Max. for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM IF(AV) IFSM TJ DC Blocking Voltage Average Rectified Forward Current TC= 125℃ Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions Junction Temperature 65 20 250 170 V A A ℃ Tstg Storage Temperature Range -50~170 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Product Specification MBR2065CT MAX 2.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 10A ; TC= 25℃ IR Maximum Instantaneous Reverse Current VR= 65V, TC= 25℃ 0.76 V 20 μA isc website：www.iscsemi.cn 2 ...