MBR1660CT

INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBR1660CT FEATURES ·Low Forward Voltage ·150℃ Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High Surge Capacity ·Low Stored Charge Majority Carrier Conduction MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) IFSM IRRM Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 100℃ Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions Peak Repetitive Reverse Current (2.0μs, 1.0kHz) 60 42 60 16 125 0.5 V A A A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Product Specification MBR1660CT MAX 2.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS VF Maximum Instantaneous Forward Voltage IF= 8A ; TC= 25℃ IF= 8A ; TC= 125℃ IR Maximum Instantaneous Reverse Current Rated DC Voltage, TC= 25℃ Rated DC Voltage, TC= 100℃ MAX 0.8 0.7 0.1 50 UNIT V mA isc ...