KSD5013

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5013 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 6 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5013 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V fT Current-Gain—Bandwidth Product VECF C-E Diode Forward Voltage tf Fall Time IC= 1A; VCE= 10V IF= 6A IC= 5A , IB1= 1A ; IB2= -2A RL= 40Ω; VCC= 200V MIN TYP. MAX UNIT 5.0 V 1.5 V 10 μA 40 130 mA 8 3 MHz 2.0 V 0.4 μs isc website：www.iscsemi.cn 2 ...