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HVV1214-100 Dataheets PDF



Part Number HVV1214-100
Manufacturers HVVi
Logo HVVi
Description Power Transistor
Datasheet HVV1214-100 DatasheetHVV1214-100 Datasheet (PDF)

The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness TM L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in th.

  HVV1214-100   HVV1214-100



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The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness TM L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications. MODE FREQUENCY (MHz) VDD (V) IDQ Power GAIN (mA) (W) (dB) η IRL VSWR (%) (dB) Class AB 1400 50 100 120 20 45 -8 20:1 Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 200µs and pulse period = 2ms. DESCRIPTION The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1200MHz to 1400MHz. The high voltage HVVFET™ technology produces over 100W of pulsed output power while offering high gain,high efficiency,and ease of matching with a 50V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. ORDERING INFORMATION Device Part Number: HVV1214-100 Demo Kit Part Number: HVV1214-100-EK Available through Richardson Electronics (http://rfwireless.rell.com/) HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS06A 12/11/08 1 TheTihnen ionvnatoivaetiSveemSiecomincdounctdourctCoormCpoamnpy!any! HVV1214-100 HighThVeoinltnaogvea,tiHveiSgehmRicoungdguecdtonreCsosmpany! HL-VBVan1d21R4a-d1a0r0PHuilgsehdVPoolwtaegreT, rHaingshisRtourggedness L12-B0a0n-1d4R0a0dMarHPz,u2ls0e0dµPsoPwuelsreHT, Vr1aV0n1%s2is1Dt4ou-r1ty00 High Voltage, High Ruggedness 1F 2o0r0G-1r4o0u0ndMBHazs,e2d0R0aµTMdsaPruAlspepL,-lB1ica0an%tdioRDnadsuatyr Pulsed Power Transistor F orELGEroCuTnRdICBAaLseCdHRAaRdaArCATpEp1FRol2iIr0cSG0aT-rt1IoiC4ou0Snn0dsMBaHsze,d20R0aμdsaPruAlpsep,li1c0a%tioDnusty EELLEECCTTRRICICALALCHCAHRAARCATECRTIESTRIICSSTICS   VIIGIηSDGRDBPSSy1RL1SS(m1DSSb)ol VGS(Q)2 Parameter  Drain-SourceBreakdown DGPIDnorrapaawtueiienntrLLEReGefeafaatikcuiknairaegngneecLyCoCsuusrrrreenntt  GateQuiescent Voltage Conditions.


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