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HVV1214-025S

HVVi

RF Transistor


Description
HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty The innovative Semiconductor Company! DESCRIPTION The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2 GHz to 1.4 GHz. FEATURES High Power G...



HVVi

HVV1214-025S

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