HVV1012-100

ThTehieTnihnneonivoanvtinavtoievvaeStieSvmeeicmSioecnomdinucdcotuoncrtdouCrcotComorpmaCpnoay!nmyp!any!Preliminary HVV1012-100 HVVL10-B1a2n-1d0A0vionics Pulsed Power Transistor The innovative SemiconL1d0-uHB2HLc5a-tVVoB-n1V1rVad01Cn112A5od0050vm11A-i21Mo2pv-1n-ai1H1o5in0c0n0zy0s0i,!cMP1s0uHPµlzsus,elds1Pe0uPdµlosPsewoP,ew1ur%elTsrerDT,ar1nua%stnyissDtiosutrotyr HVV1012-100L1-P0B2Ra5On-d1D1AU5vC0iToMnOiHcVszE,PR1u0VlµsIeEsdWPPuolswee,r1T%raDnusitsytor TM L-Band Avionic1s0P2u5l-s1e1d5P0owMeHrzT,ra10nµsisstPour lse, 1% Duty DESCRIPTION 1025-1150MHz, 10μsPPAuClsKeA, 1G%EDuty DESCRIPTION for DME and TCPAASCAKpApGlicEations DTEheSChiRghIPpToIwOeNr HVV1012-100 device is a high PACKAGE TvohletaThghiegDevdhoesDEhilsltpSiiEaggcogCohSnweneRCepdseroRIiPnlwfiHIhcoTePoVarrInTnVOLHc1IeN-eOV0Bnm1VhaN21ena-0nnd11tc02epm0-mu1olde0sdnee0edvt idRmcerFeaovdtidicrsaeaernaRissaFihspaittpgorlharhicniagsthiisotnosr doMpeHsezirgTsLvdoMatTvdoi-nhopeltoBHiopheieeclseoMnatlseze1odirtapnhgiFHraa1gngteandihgtozgEn5fertoieieoenieagh0tv1nApdnrsgdthoseg1puhiiMTnlir5Lfil1loaopficsoHgoU-c0on1wveootrBvozrh5cedwnRoMeen.aeer0LvrerLnHEem-aere-HtdMBfntvzBnhSrrheVh.aHieHhaeoenpVnatVqnaznhtu1ndfundV.fireml0ccrces1eee1speepn0qofqm2murduc1uadu-elyle2ep1seeesqrnen-0nepnuarR1dtc0dtclaediF0yycmnmdna0ratrgecrararotoaeyavidddddonaineaaceenfrsgpgvrreraisepeisRRocnitaalsmFFeooigffppcarrpetatppooirredsh1tllmmaaiiifrei0ccongnraaasa2ontsshi11tti5gmisihniis0s0ovonitgt2g2onnooe15h5slrsrdto0av2fgoe5err FEthAMFeHTEfzUrAetqRo...