MMBR951L

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR951L DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in high gain , low noise small-signal amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature Tstg Storage Temperature Range 1.5 V 100 mA 0.322 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR951L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0 10 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 20 V 0.1 μA ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA hFE DC Current Gain COB Output Capacitance IC= 5mA ; VCE= 6V IE= 0 ; VCB= 10V; f= 1MHz 50 200 0.45 1.0 pF fT Current-Gain—Bandwidth Product IC= 30mA ; VCE= 6V; f= 1GHz ︱S21e︱2 Insertion Power Gain IC= 30mA ; VCE= 6V;f= 1.0GHz ︱S21e︱2 Insertion Power Gain IC= 30mA ; VCE= 6V;f= 2.0GHz GU max Maximum Unilateral Gain IC= 30mA ; VCE= 8V;f= 1.0GHz GU max Maximum Unilateral Gain NF Noise Figure IC= 30mA ; VCE= 8V;f= 2.0GHz IC=...