MMBR931L

isc Silicon NPN RF Transistor INCHANGE Semiconductor MMBR931L DESCRIPTION ·Low Noise Figure NF = 4.3 dB TYP. @VCE = 1 V, IE = 0.25 mA, f = 1 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed primarily for use in low-power amplifiers to 1.0 GHz ,Ideal for pagers and other battery operated systems where power consumption is critical. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 10 V VCEO Collector-Emitter Voltage 5 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature 5 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor MMBR931L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0 5 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.01mA ; IE= 0 10 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 2 V ICBO Collector Cutoff Current VCB= 5V; IE= 0 50 nA hFE DC Current Gain IC= 0.25mA ; VCE= 1V 50 150 COB Output Capacitance IE= 0; VCB= 1V; f= 1MHz 0.5 pF GNF Power Gain at Optimum Figure IE= 0.25mA ; VCE= 1V; f= 1GHz 10 dB NF Noise Figure IE= 0.25mA ; VCE= 1V; f= 1GHz 4.3 dB NOTICE： ...