INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR911L
DESCRIPTION ·High Gain
GNF ...
INCHANGE Semiconductor
isc Silicon
NPN RF
Transistor
isc RF Product Specification
MMBR911L
DESCRIPTION ·High Gain
GNF = 17 dB TYP. @ IC= 10 mA, f = 500 MHz ·Low Noise Figure
NF= 1.7dB TYP. @ f= 500 MHz ·High Current-Gain Bandwidth Product
fT = 6.0 GHz TYP. @ IC= 30 mA
APPLICATIONS ·Designed for low noise, wide dynamic range front-end
amplifiers and low-noise VCO’S.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
12 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation @TC= 75℃
TJ Junction Temperature
Tstg Storage Temperature Range
2V
60 mA
0.333
W
150 ℃
-55~150
℃
isc website:www.iscsemi.cn
1
INCHANGE Semiconductor
isc Silicon
NPN RF
Transistor
isc RF Product Specification
MMBR911L
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
12
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA ; IE= 0
20
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA ; IC= 0
2
V
ICBO Collector Cutoff Current
VCB= 15V; IE= 0
0.05 μA
hFE DC Current Gain
IC= 30mA ; VCE= 10V
30 200
COB Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
1.0 pF
fT
Current-Gain—Bandwidth Product
IC= 30mA ; VCE= 10V; f= 1GHz
6.0 GHz
GNF Gain@ Noise Figure GNF Gain@ Noise Figure NF Noise Figure
IC= 10mA ; VCE= 10V; f= 0.5GHz IC= 10mA ; VCE=...