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MJH11017

Part Number	MJH11017
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Darlington Power Transistor
Published	Aug 10, 2016
Detailed Description	isc Silicon PNP Darlington Power Transistor MJH11017 DESCRIPTION ·High DC Current Gain- : hFE = 400(Min)@ IC= -10A ·Co...
Datasheet	MJH11017 PDF File

Overview

isc Silicon PNP Darlington Power Transistor MJH11017 DESCRIPTION ·High DC Current Gain- : hFE = 400(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -150V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.
5V(Max)@ IC= -10A = -4.
0V(Max)@ IC= -15A ·Complement to Type MJH11018 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifiers ,low frequency switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collect...

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