MJE8501

isc Silicon NPN Power Transistor MJE8501 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1400 V VCEO(SUS) Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 2.5 A ICM Collector Current-Peak 5 A IB Base Current-Continuous 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation@TC=25℃ 65 W TJ Junction Temperature 125 ℃ Tstg Storage Temperature -65~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.54 UNIT ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=10mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.33A IC= 1A; IB= 0.33A,TC=100℃ VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2...