MBR3045PT

INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBR3045PT FEATURES ·Dual Rectifier Conduction ·High Surge Capacity ·High Current Capability, Low Forward Voltage Drop ·Guarding for Overvoltage protection APPLICATIONS ·For use in low voltage,high frequency inverters,free wheeling, and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM IF(AV) IFSM TJ Peak Repetitive Reverse Voltage 45 Average Rectified Forward Current TC= 100℃ Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 30 200 Junction Temperature -55~150 V A A ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 6.8 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF Maximum Instantaneous Forward Voltage IR Maximum Instantaneous Reverse Current Note: Pulse test: 300μs pulse width, 1% duty cycle IF= 15A ; TC= 125℃ IF= 30A ; TC= 25℃ IF= 30A ; TC= 125℃ Rated DC blocking Voltage,TC= 25℃ Rated DC blocking Voltage, TC= 125℃ 0.57 0.84 0.72 1.0 60 UNIT V mA isc website：www.iscsemi.cn ...