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KSD986

Inchange Semiconductor
Part Number KSD986
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Aug 10, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor KSD986 DESCRIPTION ·High DC Current Gain- : hFE = ...
Datasheet PDF File KSD986 PDF File

KSD986
KSD986

Overview
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor KSD986 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.
5V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 150 V 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.
5 A ICM Collector Current-Pulse 3.
...


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