KSD985

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification KSD985 DESCRIPTION ·Collector–Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.) ·DC Current Gain- : hFE = 2000(Min) @ IC= 1A ·Low Collector Saturation Voltage APPLICATIONS ·They are suitable for use to operate from IC without predriver, such as hammer driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8V IC Collector Current-Continuous 1.5 A ICM Collector Current-Pulse 3.0 A IB Base Current Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 0.15 A 1.0 W 10 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification KSD985 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 1mA ICBO Collector Cutoff Current VCB= 60V; IE= 0 ICER Collector Cutoff Current VCE=60V;RBE=51Ω;TC=125℃ ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 60V; VBE(off)= -1.5A VCE= 60V; VBE(off)= -1.5A TC=125℃ VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 2V 1000 1.5 V 2.0 V 10 μA 1.0 mA 10 μA 1.0 mA 2.0 mA hFE-2 DC Curr...