KSD560

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor KSD560 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type KSB601 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 150 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 5 ICP Collector Current-Peak 8 IB Base Current-Continuous 0.5 Collector Power Dissipation @ Ta=25℃ 1.5 PC Collector Power Dissipation @ TC=25℃ 30 TJ Junction Temperature 150 UNIT V V V A A A W ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS INCHANGE Semiconductor KSD560 MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;, IB=0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA 0.9 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA 1.6 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE=0 1 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 3 mA hFE-1 DC Current Gain IC= 3A...