INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ40
FEATURES ·Typical RDS(on) = 0....
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRFZ40
FEATURES ·Typical RDS(on) = 0.022 ·Avalanche Rugged Technology ·100% Avalanche Tested ·Low Gate Charge ·High Current Capability
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature Tstg Storage Temperature
VALUE UNIT
50 V
±20
V
50 A
200 A
150 W
175 ℃
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
MAX 1.0 62.5
UNIT ℃/W ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRFZ40
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 29A
VGS= ±20V;VDS= 0 VDS= 50V; VGS= 0 VDS= 40V; VGS= 0; Tj= 125℃ IS= 50A; VGS= 0
MIN MAX UNIT
50 V
24V
0.028
Ω
±100
nA
250 1000
μA
...