IRFS440A

isc N-Channel MOSFET Transistor FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±30 V 6.2 A 34 A 85 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX 1.46 40 UNIT ℃/W ℃/W IRFS440A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFS440A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=3.1A IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage VGS= ±30V;VDS= 0 VDS= 500V; VGS= 0 VDS= 400V; VGS= 0; Tj= 125℃ IS= 6.2A; VGS= 0 MIN MAX UNIT 500 V 2 4 V 0.85 Ω ±100 nA 10 100 μA 1.4 V ...