INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP360
FEATURES ·Drain Current –ID= ...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRFP360
FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.2Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
400 ±20
V V
ID Drain Current-Continuous
23 A
IDM Drain Current-Single Pluse
92 A
PD Total Dissipation @TC=25℃
250 W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
MAX 0.50 30
UNIT ℃/W ℃/W
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INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRFP360
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA VGS= 10V; ID= 13A VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 400V; VGS= 0
VSD Forward On-Voltage
IS= 23A; VGS= 0
MIN MAX UNIT
400 V
24V
0.2 Ω
±100
nA
250...