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IRFP244 Dataheets PDF



Part Number IRFP244
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRFP244 DatasheetIRFP244 Datasheet (PDF)

Power MOSFET IRFP244, SiHFP244 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 63 12 39 Single 0.28 TO-247AC D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generatio.

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Power MOSFET IRFP244, SiHFP244 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 63 12 39 Single 0.28 TO-247AC D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO-247AC IRFP244PbF SiHFP244-E3 IRFP244 SiHFP244 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 3.9 mH, Rg = 25 , IAS = 15 A (see fig. 12). c. ISD  15 A, dI/dt  150 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. LIMIT 250 ± 20 15 9.7 60 1.2 550 15 15 150 4.8 - 55 to + 150 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91211 S11-0445-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP244, SiHFP244 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased RthJA RthCS Maximum Junction-to-Case (Drain) RthJC TYP. - 0.24 - MAX. 40 0.83 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 250 V, VGS = 0 V VDS = 200 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 9.0 Ab VDS = 50 V, ID = 9.0 Ab 250 - -V - 0.37 - V/°C 2.0 - 4.0 V - - ± 100 nA - - 25 μA - - 250 - - 0.28  6.7 - -S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 11 A, VDS = 200 V, see fig. 6 and 13b VDD = 125 V, ID = 11 A , Rg = 9.1 , RD = 11 , see fig. 10b - 1400 320 73 14 49 42 24 63 12 39 - pF nC ns Internal Drain Inductance Internal Source Inductance LD Between lead, 6 mm (0.25") from D package and center of G LS die contact S - 5.0 nH - 13 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta IS ISM MOSFET symbol showing the integral reverse p - n junction diode D G S - - 15 A - - 60 Body Diode Voltage VSD TJ = 25 °C, IS = 15 A, VGS = 0 Vb - - 1.8 V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge trr - 290 570 ns TJ = 25 °C, IF = 11 A, dI/dt = 100 A/μsb Qrr - 3.1 6.3 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. www.vishay.com 2 Document Number: 91211 S11-0445-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) IRFP244, SiHFP244 Vishay Siliconix Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteri.


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