Document
Power MOSFET
IRFP244, SiHFP244
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 V
63 12 39 Single
0.28
TO-247AC
D
S
D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
TO-247AC IRFP244PbF SiHFP244-E3 IRFP244 SiHFP244
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 3.9 mH, Rg = 25 , IAS = 15 A (see fig. 12). c. ISD 15 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case.
LIMIT 250 ± 20 15 9.7 60 1.2 550 15 15 150 4.8
- 55 to + 150 300d 10 1.1
UNIT
V
A
W/°C mJ A mJ W V/ns °C
lbf · in N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91211 S11-0445-Rev. B, 21-Mar-11
www.vishay.com 1
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP244, SiHFP244
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased
RthJA RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP. -
0.24 -
MAX. 40 0.83
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 9.0 Ab
VDS = 50 V, ID = 9.0 Ab
250 -
-V
- 0.37 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25 μA
- - 250
-
-
0.28
6.7 -
-S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 11 A, VDS = 200 V, see fig. 6 and 13b
VDD = 125 V, ID = 11 A , Rg = 9.1 , RD = 11 , see fig. 10b
-
1400 320 73
14 49 42 24
63 12 39 -
pF nC ns
Internal Drain Inductance Internal Source Inductance
LD
Between lead, 6 mm (0.25") from
D
package and center of G
LS die contact S
- 5.0 nH
- 13 -
Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta
IS ISM
MOSFET symbol
showing the integral reverse p - n junction diode
D
G S
- - 15 A
- - 60
Body Diode Voltage
VSD
TJ = 25 °C, IS = 15 A, VGS = 0 Vb
- - 1.8 V
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
trr
- 290 570 ns TJ = 25 °C, IF = 11 A, dI/dt = 100 A/μsb
Qrr - 3.1 6.3 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com 2
Document Number: 91211 S11-0445-Rev. B, 21-Mar-11
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFP244, SiHFP244
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteri.