isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=3.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·S...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID=3.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
400
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
3.5
A
Ptot
Total Dissipation@TC=25℃
35
W
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.67 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
80
℃/W
IRF730FI
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 3.0A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 400V; VGS= 0
VSD
Diode Forward Voltage
IF= 3.5A; VGS= 0
IRF730FI
MIN MAX UNIT
400
V
2
4
V
...