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IRF647

N-Channel Mosfet Transistor

Description

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF647 ·FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Lower Leakage Current: 10mA (Max.) @ VDS = 250V ·DESCRITION ·Designed especially for high voltage,high speed applications, ...

Inchange Semiconductor

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