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IRF640FI

Part Number	IRF640FI
Manufacturer	Inchange Semiconductor
Description	N-Channel Mosfet Transistor
Published	Aug 6, 2016
Detailed Description	INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640FI FEATURES ·Low RDS(on) = 0.18...
Datasheet	IRF640FI PDF File

Overview

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640FI FEATURES ·Low RDS(on) = 0.
180Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±20 V V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 40 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.
iscsemi.
cn ...

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