Document
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·RDS(on) =1.5Ω ·3.3A and 250V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·High Input Impedance
isc Product Specification
IRF625
·DESCRITION ·Designed for high speed applications,
such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
250 ±20
V V
ID Drain Current-Continuous
3.3 A
IDM Drain Current-Single Plused
13 A
PD Total Dissipation @TC=25℃
40 W
Tj Max. Operating Junction Temperature -55~150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
3.12 80
℃/W ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
Drain-Source Voltage
Breakdown VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current
VGS= 10V; ID= 1.4A VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 250V; VGS=0
VSD Forward On-Voltage
IS= 3.8A; VGS=0
Ciss Input Capacitance
Coss Output Capacitance
VDS=25V,VGS=0V, F=1.0MHz
Crss Reverse Transfer Capacitance
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr Rise Time Td(off) Turn-off Delay Time
VDD=125V,ID=3.8A RG=18Ω
Tf Fall Time
isc Product Specification
IRF625
MIN TYP
MAX UNIT
250 V
2 4V 1.5 Ω
±500 nA
250 uA
1.8 V
340 pF
110 pF
32 pF
MIN TYP MAX UNIT 11 17 ns 24 36 ns 21 32 ns 13 20 ns
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
.