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IRF625 Dataheets PDF



Part Number IRF625
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel Mosfet Transistor
Datasheet IRF625 DatasheetIRF625 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·RDS(on) =1.5Ω ·3.3A and 250V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·High Input Impedance isc Product Specification IRF625 ·DESCRITION ·Designed for high speed applications, such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Sou.

  IRF625   IRF625



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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·RDS(on) =1.5Ω ·3.3A and 250V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·High Input Impedance isc Product Specification IRF625 ·DESCRITION ·Designed for high speed applications, such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 250 ±20 V V ID Drain Current-Continuous 3.3 A IDM Drain Current-Single Plused 13 A PD Total Dissipation @TC=25℃ 40 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 3.12 80 ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Voltage Breakdown VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID= 1.4A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 250V; VGS=0 VSD Forward On-Voltage IS= 3.8A; VGS=0 Ciss Input Capacitance Coss Output Capacitance VDS=25V,VGS=0V, F=1.0MHz Crss Reverse Transfer Capacitance ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS Td(on) Turn-on Delay Time Tr Rise Time Td(off) Turn-off Delay Time VDD=125V,ID=3.8A RG=18Ω Tf Fall Time isc Product Specification IRF625 MIN TYP MAX UNIT 250 V 2 4V 1.5 Ω ±500 nA 250 uA 1.8 V 340 pF 110 pF 32 pF MIN TYP MAX UNIT 11 17 ns 24 36 ns 21 32 ns 13 20 ns isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn .


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