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MUR1660G

Thinki Semiconductor

16.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes

MUR1620G thru MUR1660G ® MUR1620G thru MUR1660G Pb Free Plating Product Pb 16.0 Ampere Heatsink Single Ultra Fast Re...



MUR1660G

Thinki Semiconductor


Octopart Stock #: O-1038448

Findchips Stock #: 1038448-F

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Description
MUR1620G thru MUR1660G ® MUR1620G thru MUR1660G Pb Free Plating Product Pb 16.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability TO-220AC .419(10.66) .387(9.85) .139(3.55) MIN Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) .548(13.93) Mechanical Data ¬ Case: Molded TO-220AC ¬ Epoxy: UL 94V-0 rate flame retardant ¬ Terminals: Solderable per MIL-STD-202 method 208 ¬ Polarity:Color band denotes cathode ¬ Mounting position: Any ¬ Weight: 2.1 gram approximately .177(4.5)MAX .50(12.7)MIN .038(0.96) .019(0.50) .1(2.54) .1(2.54) .025(0.65)MAX MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current @TA =125℃ 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) Peak Forward Voltage at 16.0A DC Maximum DC Reverse Current @TJ=25℃ at Rated DC Blocking Voltage @TJ=125℃ Maximum Reverse Recovery Time(Note1) Typical Junction Capacitance (Note2) Typical Thermal Resistance (Note3) Operating and Storage Temperatu...




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