IRFBC30

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFBC30 FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·High current ,high speed switching ·Switch mode power supplies ·DC-AC converters for welding equipment and Uninterruptible power supplies and motor Driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 ±20 V V ID Drain Current-Continuous 3.6 A IDM Drain Current-Single Pluse 14 A PD Total Dissipation @TC=25℃ 75 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX UNIT 1.7 ℃/W 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFBC30 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VDS= VGS; ID= 0.25mA VGS= 10V; ID=2.2A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 VSD Forward On-Voltage IS= 3.6A; VGS= 0 Ciss Input Cap...