IRFAC40R

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFAC40R DESCRIPTION ·Repetitive Avalanche Ratings ·Dynamic dv/dt Rating ·Hermetically Sealed ·Simple Drive Requirements ·Ease of Paralleling APPLICATIONS ·Designed for applications such as switching power Supplies ,motor controls ,inverters ,choppers ,audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 600 ±20 V V Drain Current-continuous@ TC=25℃ 6.2 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 30 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRFAC40R ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 3.4A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 VSD Diode Forward Voltage IF= 6.2A; VGS= 0 Ciss Input Capacitance Coss Output Capacitan...