INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF843
FEATURES ·Lower Input Capacita...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRF843
FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
450 ±20
V V
ID Drain Current-Continuous
7A
IDM Drain Current-Single Pluse
28 A
PD Total Dissipation @TC=25℃
125 W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc Product Specification
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
MAX UNIT 1 ℃/W 80 ℃/W
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRF843
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA VGS= 10V; ID=4.4A VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Curr...