INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF841FI
FEATURES ·Lower Input Capaci...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRF841FI
FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
450 ±20
V V
ID Drain Current-Continuous
4.5 A
IDM Drain Current-Single Pluse
32 A
PD Total Dissipation @TC=25℃
40 W
TJ Max. Operating Junction Temperature
150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
MAX UNIT 3.12 ℃/W 62.5 ℃/W
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INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRF841FI
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA VGS= 10V; ID=4.4A VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 450V; VGS= 0
VSD Forward On-Voltage
IS= 8A; VGS= 0
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
VDS=25...