IRF832

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF832 DESCRIPTION ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) ·Fast Switching Speed ·Simple Drive Requirements APPLICATIONS ·Desinged for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID PD Tj Tstg Drain-Source Voltage (VGS=0) 500 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 4.0 A Power Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 1.67 80 ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF832 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-stage Resistance VGS= 10V; ID= 2.5A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 VSD Diode Forward Voltage IF= 4.5A; VGS= 0 MIN MAX UNIT 500 V 24V 2.0 Ω ±500 nA 250 uA 1.6 V isc website：www.iscsemi.cn 2...