isc N-Channel MOSFET Transistor
IRF830FI
DESCRIPTION ·Drain Current –ID= 3.0A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 5...
isc N-Channel MOSFET
Transistor
IRF830FI
DESCRIPTION ·Drain Current –ID= 3.0A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Desinged for high efficiency switch mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
3
A
PD
Power Dissipation@TC=25℃
35
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.67 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
80
℃/W
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isc N-Channel MOSFET
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-stage Resistance VGS= 10V; ID= 2.5A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0
VSD
Diode Forward Voltage
IF= 3A; VGS= 0
IRF830FI
MIN MAX UNIT
500
V
2
4
V
1.5
Ω
±100 nA
250
uA
1.6
V
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