IRF840PBF
®
IRF840PBF
Pb Free Plating Product
Pb
8.8A,500V Heatsink N-Channel Type Power MOSFET
Features
■ RDS(on) ...
IRF840PBF
®
IRF840PBF
Pb Free Plating Product
Pb
8.8A,500V Heatsink N-Channel Type Power MOSFET
Features
■ RDS(on) (Max 0.85 Ω )@VGS=10V ■ Gate Charge (Typical 35nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested
1. Gate {
{ 2. Drain
●
◀▲
● ●
{ 3. Source
BVDSS = 500V RDS(ON) = 0.85 ohm ID = 8.8A
General Description
This N-channel enhancement mode field-effect power
transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application.
TO-220C
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ TL
Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Min. -
(Note 1)
(Note 2) (Note 1) (Note 3)
Value 500 8.8 5.5 35.2
±30
559 13.7
5 137 1.1 - 55 ~ 150...
