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IRF640PBF
N-Channel Type Power MOSFET
Description
IRF640PBF ® IRF640PBF Pb Free Plating Product Pb 18A,200V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 0.18 ˟ )@VGS=10V ̰ Gate Charge (Typical 44nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1.Gate 2.Drain 3.Source BVDSS = 200V RDS(ON) = 0.18 ohm ID = 18A General Description This N-channel enhancement mode...
Thinki Semiconductor
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