Silicon Epitaxial Planar Zener Diode
HZS Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
REJ03G0184-0300Z (Previous: ADE-208-120B)
Re...
Description
HZS Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
REJ03G0184-0300Z (Previous: ADE-208-120B)
Rev.3.00 Mar.11.2004
Features
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc.
Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No. HZS Series
Pin Arrangement
Mark Type No.
Package Code MHD
B
7
12
2
Type No.
Cathode band
1. Cathode 2. Anode
Rev.3.00, Mar.11.2004, page 1 of 6
HZS Series
Absolute Maximum Ratings
Item Power dissipation Junction temperature Storage temperature
Symbol Pd Tj Tstg
Value 400 200 −55 to +175
(Ta = 25°C) Unit mW °C °C
Electrical Characteristics
Zener Voltage
Type
Grade
VZ (V)*1 Min
HZS2 A1
1.6
A2 1.7
A3 1.8
B1 1.9
B2 2.0
B3 2.1
C1 2.2
C2 2.3
C3 2.4
HZS3 A1
2.5
A2 2.6
A3 2.7
B1 2.8
B2 2.9
B3 3.0
C1 3.1
C2 3.2
C3 3.3
HZS4 A1
3.4
A2 3.5
A3 3.6
B1 3.7
B2 3.8
B3 3.9
C1 4.0
C2 4.1
C3 4.2
HZS5 A1
4.3
A2 4.4
A3 4.5
B1 4.6
B2 4.7
B3 4.8
Note: 1. Tested with DC.
Max 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0
Test Condition IZ (mA) 5
Reverse Current
IR (µA)
Test Condition
Max
VR (V)
25 0.5
(Ta = 25°C)
Dynamic Resistance
rd (Ω)
Test Condition
Max
IZ (mA)
100 5
5 5 0.5 100 5
5 5 0.5 100 5
5 5...
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