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IRFR234

Power MOSFET

Description

$GYDQFHG 3RZHU 026)(7 IRFR234 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.327Ω (Typ.) BVDSS = 250 V RDS(on) = 0.45Ω ID = 6.6 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings ...

Fairchild Semiconductor

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