Power MOSFET
$GYDQFHG 3RZHU 026)(7
IRFR014
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capa...
Description
$GYDQFHG 3RZHU 026)(7
IRFR014
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.097Ω (Typ.)
BVDSS = 60 V RDS(on) = 0.14Ω ID = 8.2 A
D-PAK I-PAK
2
11
3
2 3
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
1. Gate 2. Drain 3. Source
Value 60 8.2 5.2 33 ±20 58 8.2 1.8 5.5 2.5 18 0.14
- 55 to +150
300
Units V
A
A V mJ A mJ V/ns W W W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC RθJA RθJA
Junction-to-Case Junction-to-Ambient * Junction-to-Ambient
----
* When mounted on the minimum pad size recommended (PCB Mount).
Max. 7.04 50 110
Units °C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRFR014
1&+$11(/ 32:(5 026)(7
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS
∆BV/∆TJ VGS(th)
IGSS
IDSS
RDS(on)
gfs Ciss Coss C...
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