Document
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.214Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C) Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
IRFS244A
BVDSS = 250 V RDS(on) = 0.28Ω ID = 10.2 A
TO-3PF
1 2 3
1.Gate 2. Drain 3. Source
Value 250 10.2 6.5 64 ±30 455 10.2 7.3 4.8 73 0.59
- 55 to +150
300
Units V
A
A V mJ A mJ V/ns W W/°C
°C
Thermal Resistance
Symbol
RθJC RθJA
Characteristic Junction-to-Case Junction-to-Ambient
Typ. ---
Max. 1.7 40
Units °C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRFS244A
1&+$11(/ 32:(5 026)(7
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS
∆BV/∆TJ VGS(th)
IGSS
IDSS
RDS(on)
gfs Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge
250 -- -- V -- 0.28 -- V/°C 2.0 -- 4.0 V -- -- 100 nA -- -- -100 -- -- 10 -- -- 100 µA
-- -- 0.28 Ω
-- 7.32 --- 1230 1600 -- 180 210 pF -- 80 95 -- 17 50 -- 17 50
ns -- 74 160 -- 32 80 -- 46 61 -- 9.3 -- nC -- 19.5 --
Ω
VGS=0V,ID=250µA ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=30V VGS=-30V VDS=250V VDS=200V,TC=125°C
VGS=10V,ID=5.1A
(4)
VDS=40V,ID=5.1A
(4)
VGS=0V,VDS=25V,f =1MHz See Fig 5
VDD=125V,ID=14A, RG=9.1Ω
See Fig 13
(4) (5)
VDS=200V,VGS=10V, ID=14A See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr
Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
-(1) --
-- 10.2
Integral reverse pn-diode
A
-- 64
in the MOSFET
(4) -- -- 1.5 V TJ=25°C,IS=10.2A,VGS=0V
-- 215 -- ns TJ=25°C,IF=14A
-- 1.59 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=7mH, IAS=10.2A, VDD=50V, RG=27Ω, Starting TJ =25°C (3) ISD ≤ 14A, di/dt ≤ 250A/µs, VDD ≤ BVDSS , Starting TJ =25 °C (4) Pu.