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MBR20100CT

ON Semiconductor

Power Rectifiers

MBR2080CT, MBR2090CT, MBR20100CT SWITCHMODE™ Power Rectifiers This series uses the Schottky Barrier principle with a pla...


ON Semiconductor

MBR20100CT

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Description
MBR2080CT, MBR2090CT, MBR20100CT SWITCHMODE™ Power Rectifiers This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features 20 A Total (10 A Per Diode Leg) Guard−Ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction Shipped 50 units per plastic tube Pb−Free Packages are Available* Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.9 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 80−100 VOLTS 1 2, 4 3 4 TO−220AB CASE 221A PLASTIC 1 23 MARKING DIAGRAM AY WW B20x0G AKA *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2009 September, 2009 − Rev. 0 1 A = Assembly Location Y = Year WW = Work Week B20x0 = Device Code x = 8, 9 or 10 G = Pb−Free Device AKA = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: MBR20100CT/D M...




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