IRFW640A

Advanced Power MOSFET IRFW/I640A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC) Continuous Drain Current (TC=100oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC) * Total Power Dissipation (TC=25oC) Linear Derating Factor O2 O1 O1 O3 Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds BVDSS = 200 V RDS(on) = 0.18 Ω ID = 18 A D2-PAK I2-PAK 2 1 3 1 2 3 1. Gate 2. Drain 3. Source Value 200 18 11.4 7.2 +_ 30 216 18 13.9 5.0 3.1 139 1.11 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W W/oC oC Thermal Resistance Symbol Characteristic Typ. RθJC Junction-to-Case -- RθJA Junction-to-Ambient * -- RθJA Junction-to-Ambient -- * When mounted on the minimum pad size recommended (PCB Mount). Max. 0.9 40 62.5 Units oC/W Rev. B ©1999 Fairchild Semiconductor Corporation IRFW/I640A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss C...