Document
$GYDQFHG 3RZHU 026)(7
IRFW/I614A
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 1.393Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 250 V RDS(on) = 2.0 Ω ID = 2.8 A
D2-PAK I2-PAK
2
1 3
1 2 3
1. Gate 2. Drain 3. Source
Value 250 2.8 1.8 8.5 ±30 49 2.8
4 4.8 3.1 40 0.32
- 55 to +150
300
Units V
A
A V mJ A mJ V/ns W W W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC RθJA RθJA
Junction-to-Case Junction-to-Ambient * Junction-to-Ambient
----
* When mounted on the minimum pad size recommended (PCB Mount).
Max. 3.14 40 62.5
Units °C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRFW/I614A
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Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS
∆BV/∆TJ VGS(th)
IGSS
IDSS
RDS(on)
gfs Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge
250 -- -- V -- 0.29 -- V/°C 2.0 -- 4.0 V -- -- 100 nA -- -- -100 -- -- 10 -- -- 100 µA
-- -- 2.0 Ω
-- 1.59 --- 180 230 -- 35 43 pF -- 14 18 -- 10 30 -- 11 30
ns -- 22 55 -- 14 40 -- 8.5 12 -- 1.8 -- nC -- 3.9 --
Ω
VGS=0V,ID=250µA ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=30V VGS=-30V VDS=250V VDS=200V,TC=125°C
VGS=10V,ID=1.4A
(4)
VDS=40V,ID=1.4A
(4)
VGS=0V,VDS=25V,f =1MHz See Fig 5
VDD=125V,ID=2.8A, RG=24Ω
See Fig 13
(4) (5)
VDS=200V,VGS=10V, ID=2.8A See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr
Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
-(1) --
-- 2.8
Integral reverse pn-diode
A
-- 8.5
in the MOSFET
(4) -- -- 1.5 V TJ=25°C,IS=2.8A,VGS=0V
-- 112 -- ns TJ=25°C,IF=2.8A
-- 0.35 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=10mH, IAS=2.8A, VDD=50V, RG=27Ω, Starting TJ =25°C (3) ISD ≤ 2.8A, di/dt ≤ 130A/µs, VDD ≤ BVDSS , Starting TJ =25°C (4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2% (5) Essentially Independent of Operating Temperature
Capacitance [pF]
RDS(on) , [ Ω] Drain-Source On-Resistance
ID , Drain Current [A]
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Fig 1. Output Characteristics
VGS Top : 15V
10 V 8.0 V 7.0 V 6.0 V 5.5 V
100 5.0 V
Bottom : 4.5V
10-1 10-1
@ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
4
3
V =10 V
GS
2
V =20 V 1 GS
@ Note :T =25oC
J
0 0 2 4 6 8 10
I , Drain Current [A]
D
Fig 5. Capacitance vs. Drain-Source Voltage
300 C iss
Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd
200
C oss 100
C rss
@ Notes : 1. VGS = 0 V 2. f = 1 MHz
0 100 101
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
IDR , Reverse Drain Current [A]
ID , Drain Current [A]
IRFW/I614A
Fig 2. Transfer Characteristics
100
150 oC
10-1 25 oC
10-2 2
- 55 oC
@ Notes : 1. VGS = 0 V 2. VDS = 40 V 3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
100
10-1
10-2 0.2
150 oC
25 oC
@Notes : 1. VGS =0 V 2. 250µsPulse Test
0.4 0.6 0.8 1.0 1.2
VSD , Source-Drain Voltage [V]
1.4
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 50 V 10
VDS = 125 V
VDS = 200 V
5
@ Notes : ID = 2.8 A 0
0 2 4 6 8 10
QG , Total Gate Charge [nC]
BVDSS , (Normalized) Drain-Source Breakdown Voltage
IRFW/I614A
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Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9 @ Notes : 1. VGS = 0 V 2. ID = 250 µA
0.8 -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
RDS(on) , (Normalized) Drain-Source On-Resistance
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0 @ Notes :
0.5 1. VGS = 10 V 2. ID = 1.4 A
0.0 -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
Fig 9. Max. .