Power MOSFET
$GYDQFHG 3RZHU 026)(7
IRF614S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capa...
Description
$GYDQFHG 3RZHU 026)(7
IRF614S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 1.393Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 250 V RDS(on) = 2.0 Ω ID = 2.8 A
D2-PAK I2-PAK
2
1 3
1 2 3
1. Gate 2. Drain 3. Source
Value 250 2.8 1.8 8.5 ±30 49 2.8
4 4.8 3.1 40 0.32
- 55 to +150
300
Units V
A
A V mJ A mJ V/ns W W W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC RθJA RθJA
Junction-to-Case Junction-to-Ambient * Junction-to-Ambient
----
* When mounted on the minimum pad size recommended (PCB Mount).
Max. 3.14 40 62.5
Units °C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRF614S
1&+$11(/ 32:(5 026)(7
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS
∆BV/∆TJ VGS(th)
IGSS
IDSS
RDS(on)
gfs Ciss C...
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