INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2484
DESCRIPTION ·Collector-Emitt...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC2484
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High Power Dissipation ·Complement to Type 2SA1060
APPLICATIONS ·Designed for high power audio frequency amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
80 V
wwwVCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous 5 A
ICM Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
8A 60 W 150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
http://www.Datasheet4U.com
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC2484
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 80 V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 5V
ICBO Collector Cutoff Current
VCB= 80V; IE= 0
IEBO Emitter Cutoff Current
VEB= 3V; IC= 0
2.0 V 1.8 V 50 μA 50 μA
hFE-1
DC Current Gain
IC= 20mA ; VCE= 5V
20
hFE-2
DC Current Gain
i.cnhFE-3
DC Current Gain
.iscsemfT Current-Gain—Bandwidth Product
IC= 1A ; VCE= 5V IC= 3A; VCE= 5V IC= 0.5A; VCE= 5V
www hFE-2 Classifications
40 20
RQP
20
220 MHz
40-80 60-120 100-200
...
