Document
$GYDQFHG 3RZHU 026)(7
IRLW/I640A
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.145Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 200 V RDS(on) = 0.18Ω ID = 18 A
D2-PAK I2-PAK
2
1 3
1 2 3
1. Gate 2. Drain 3. Source
Value 200 18 11.4 63 ±20 64 18 11
5 3.1 110 0.88
- 55 to +150
300
Units V
A
A V mJ A mJ V/ns W W W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC RθJA RθJA
Junction-to-Case Junction-to-Ambient * Junction-to-Ambient
----
* When mounted on the minimum pad size recommended (PCB Mount).
Max. 1.14 40 62.5
Units °C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
1
IRLW/I640A
1&+$11(/ 32:(5 026)(7
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS
∆BV/∆TJ VGS(th)
IGSS
IDSS
RDS(on)
gfs Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( Miller ) Charge
200 -- -- V -- 0.17 -- V/°C 1.0 -- 2.0 V -- -- 100 nA -- -- -100 -- -- 10 -- -- 100 µA
-- -- 0.18 Ω
-- 13.3 --- 1310 1705 -- 200 250 pF -- 95 120 -- 11 30 -- 8 25
ns -- 46 100 -- 15 40 -- 40 56 -- 6.8 -- nC -- 18.6 --
Ω
VGS=0V,ID=250µA ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=20V VGS=-20V VDS=200V VDS=160V,TC=125°C
VGS=5V,ID=9A
(4)
VDS=40V,ID=9A (4)
VGS=0V,VDS=25V,f =1MHz See Fig 5
VDD=100V,ID=18A, RG=4.6Ω
See Fig 13
(4) (5)
VDS=160V,VGS=5V, ID=18A See Fig 6 & Fig 12
(4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr
Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
-(1) --
-- 18 -- 63
Integral reverse pn-diode A
in the MOSFET
(4) -- -- 1.5 V TJ=25°C,IS=18A,VGS=0V
-- 224 -- ns TJ=25°C,IF=18A
-- 1.55 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pul.