Power MOSFET
$GYDQFHG 3RZHU 026)(7
IRL510
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Techn...
Description
$GYDQFHG 3RZHU 026)(7
IRL510
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C) Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Thermal Resistance
Symbol
RθJC RθCS RθJA
Characteristic Junction-to-Case
Case-to-Sink Junction-to-Ambient
BVDSS = 100 V RDS(on) = 0.44Ω ID = 5.6 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Value 100 5.6 4.0 20 ±20 62 5.6 3.7 6.5 37 0.25
- 55 to +175
300
Units V
A
A V mJ A mJ V/ns W °C
°C
Typ. -0.5 --
Max. 4.1 -62.5
Units °C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
1
IRL510
1&+$11(/ 32:(5 026)(7
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
BVDSS Drain-Source Breakdown Voltage 100 -- -- V VGS=0V,ID=250µA
∆BV/∆TJ Breakdown Voltage Temp. Coeff. -...
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