IRL510

$GYDQFHG 3RZHU 026)(7 IRL510 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient BVDSS = 100 V RDS(on) = 0.44Ω ID = 5.6 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Value 100 5.6 4.0 20 ±20 62 5.6 3.7 6.5 37 0.25 - 55 to +175 300 Units V A A V mJ A mJ V/ns W °C °C Typ. -0.5 -- Max. 4.1 -62.5 Units °C/W Rev. B ©1999 Fairchild Semiconductor Corporation 1 IRL510 1&+$11(/ 32:(5 026)(7 Electrical Characteristics (TC=25°C unless otherwise specified) Symbol Characteristic Min. Typ. Max. Units Test Condition BVDSS Drain-Source Breakdown Voltage 100 -- -- V VGS=0V,ID=250µA ∆BV/∆TJ Breakdown Voltage Temp. Coeff. -...