Document
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.097Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C) Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Thermal Resistance
Symbol
RθJC RθCS RθJA
Characteristic Junction-to-Case
Case-to-Sink Junction-to-Ambient
IRFZ14
BVDSS = 60 V RDS(on) = 0.14Ω ID = 10 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Value 60 10 7.1 40 ±20 86 10 3.0 5.5 30 0.20
- 55 to +175
300
Units V
A
A V mJ A mJ V/ns W W/°C
°C
Typ. -0.5 --
Max. 4.96
-62.5
Units °C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRFZ14
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Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS
∆BV/∆TJ VGS(th)
IGSS
IDSS
RDS(on)
gfs Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge
60 -- -- V
-- 0.059 -- V/°C
2.0 -- 4.0 V
-- -- 100 nA -- -- -100
-- -- 10 -- -- 100 µA
VGS=0V,ID=250µA ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=20V VGS=-20V VDS=60V VDS=48V,TC=150°C
-- -- 0.14 Ω VGS=10V,ID=5A
(4)
Ω
-- 6.3 --
VDS=30V,ID=5A
(4)
-- 280 360 -- 110 125 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5 -- 40 46
-- 11 25
-- 17 40
VDD=30V,ID=10A,
-- 27 60 ns RG=24Ω
See Fig 13 (4) (5)
-- 28 60
-- 12 17
VDS=48V,VGS=10V,
-- 2.4 -- nC ID=10A
-- 5.4 --
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr
Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
-(1) --
-- 10 -- 40
Integral reverse pn-diode A
in the MOSFET
(4) -- -- 1.5 V TJ=25°C,IS=10A,VGS= 0V
-- 55 -- ns TJ=25°C,IF=10A
-- 0.11 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=1mH, IAS=10A, VDD=25V, RG=27Ω, Starting TJ =25°C (3) ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ BVDSS , Starting TJ =25°C (4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2% (5) Essentially Independent of Operating Temperature
RDS(on) , [ Ω] Drain-Source On-Resistance
Capacitance [pF]
ID , Drain Current [A]
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Fig 1. Output Characteristics
VGS
Top : 15V
10 V
8.0 V
7.0 V
101
6.0 V 5.5 V
5.0 V
Bottom : 4.5V
100 10-1
@ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.20
0.15 VGS =10V
0.10 0.05 0.00
0
VGS =20V
@Note: TJ =25oC
10 20 30
ID , Drain Current [A]
40
Fig 5. Capacitance vs. Drain-Source Voltage
600 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd
C iss 400 C oss
200 C rss
@ Notes : 1. VGS = 0 V 2. f = 1 MHz
0 100 101
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
IDR , Reverse Drain Current [A]
I , Drain Current [A]
D
IRFZ14
Fig 2. Transfer Characteristics
101
175 oC
100 25 oC
10-1 2
- 55 oC
@ Notes : 1. V = 0 V
GS
2. V = 30 V DS
3. 250 µs Pulse Test
468
V , Gate-Source Voltage [V]
GS
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
@Notes :
175 oC 25 oC
1. V =0 V
GS
2. 250µsPulse Test
10-1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V , Source-Drain Voltage [V]
SD
2.4
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 12 V 10
VDS = 30 V
VDS = 48 V
5
@ Notes : ID = 10.0 A
0 0 3 6 9 12 15
QG , Total Gate Charge [nC]
IRFZ14
Fig 7. Breakdown Voltage vs. Temperature
1.2
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Fig 8. On-Resistance vs. Temperature
2.5
RDS(on) , (Normalized) Drain-Source On-Resistance
BV , (Normalized)
DSS
Drain-Source Breakdown Voltage
1.1 2.0
1.0 1.5
ID , Drain Current [A]
0.9 @ Notes :
1. V = 0 V GS
2. I D
= 250 µA
0.8 -75 -50 -25 0 25 50 75 100 125 150 175 200
T , Junction Temperature [oC]
J
1.0 @ Notes : 1. V = 10 V
GS
2. I = 5 A D
0.5 -75 -50 -25 0 25 50 75 100 125 150 175 200
T , Junction Temperature [oC]
J
102 101 100 10-1100
Fig 9. Max. Safe Operating Area
Operation in This Area.