DatasheetsPDF.com
IRFWZ14
Power MOSFET
Description
$GYDQFHG 3RZHU 026)(7 IRFWZ14 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.097Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt ...
Fairchild Semiconductor
Download IRFWZ14 Datasheet
Similar Datasheet
IRFWZ14
Power MOSFET
- Fairchild Semiconductor
IRFWZ14A
Power MOSFET
- Fairchild Semiconductor
IRFWZ24
Power MOSFET
- Fairchild Semiconductor
IRFWZ24A
Power MOSFET
- Samsung
IRFWZ34
Power MOSFET
- Fairchild Semiconductor
IRFWZ34A
Power MOSFET
- Fairchild Semiconductor
IRFWZ44
Power MOSFET
- Fairchild Semiconductor
IRFWZ44A
Power MOSFET
- Samsung
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)