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IRFW720S
Power MOSFET
Description
$GYDQFHG 3RZHU 026)(7 IRFW720S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Lower RDS(ON): 1.408Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteris...
Fairchild Semiconductor
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