IRFS710A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Low RDS(ON) : 2.815 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 ΟC) Continuous Drain Current (TC=100 ΟC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt O2 O1 O1 O3 Total Power Dissipation (TC=25 ΟC ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8”from case for 5-seconds IRFS710A BVDSS = 400 V RDS(on) = 3.6 Ω ID = 1.6 A TO-220F 2 3 1.Gate 2. Drain 3. Source Value 400 1.6 1 6 +_ 30 117 1.6 2.3 4.0 23 0.19 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W/ ΟC ΟC Thermal Resistance Symbol R θJC R θJA Characteristic Junction-to-Case Junction-to-Ambient ©1999 Fairchild Semiconductor Corporation Typ. --- Max. 5.37 62.5 Units ΟC /W Rev. B IRFS710A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 ΟC unless otherwise specified) Symbol BVDSS ∆BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Min. Typ. Max. Units Test Condition Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Thresho...