IRFS610A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 oC) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy O2 Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC) Linear Derating Factor O1 O1 O3 Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds IRFS610A BVDSS = 200 V RDS(on) = 1.5 Ω ID = 2.5 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Value 200 2.5 1.6 10 +_ 30 42 2.5 2.2 5.0 22 0.18 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W/oC oC Thermal Resistance Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient ©1999 Fairchild Semiconductor Corporation Typ. --- Max. 5.71 62.5 Units oC/W Rev. B IRFS610A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Min. Typ. Max. Units Test Condition Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshol...